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| Datasheet File OCR Text: |
| ELM14801AA Dual P-Channel Enhancement Mode Power MOS FET General Description ELM14801AA uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to form a bidirectional blocking switch. Features VDS (V) = -30V ID = -5A RDS(ON) < 49m (VGS = -10V) RDS(ON) < 64m (VGS = -4.5V) RDS(ON) < 120m (VGS = -2.5V) SOP-8 Top View |
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